AON6596
MOSFET N-CH 30V 20A/35A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON6596 is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and offers continuous drain current ratings of 20A at ambient temperature (Ta) and 35A at case temperature (Tc). The maximum power dissipation is 5W (Ta) and 41W (Tc).
Optimized for efficiency, the AON6596 exhibits a low on-resistance (Rds On) of 7.5mOhm at 20A and 10V gate-source voltage. Key electrical parameters include a maximum gate charge (Qg) of 30nC at 10V Vgs and an input capacitance (Ciss) of 1150pF at 15V Vds. The device operates across a temperature range of -55°C to 150°C.
The AON6596 is housed in an 8-DFN (5x6) package with flat leads, suitable for surface mounting. It is supplied in Tape & Reel packaging. This MOSFET is commonly utilized in power management solutions across automotive, industrial, and computing sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
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