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AON6594

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AON6594

MOSFET N-CH 30V 22A/35A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6594 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 22A at ambient temperature and 35A at case temperature. The device boasts a low on-resistance (Rds On) of 7mOhm maximum at 20A and 10V gate drive. With a maximum power dissipation of 5W at ambient temperature and 39W at case temperature, the AON6594 is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 22 nC at 10V and input capacitance (Ciss) of 1037 pF at 15V. The AON6594 is housed in an 8-DFN (5x6) surface-mount package and operates across a wide temperature range of -55°C to 150°C. This device is commonly utilized in power supplies, DC-DC converters, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1037 pF @ 15 V

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