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AON6590

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AON6590

MOSFET N-CH 40V 67A/100A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6590 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 67A at ambient temperature and 100A at case temperature. With a low on-resistance (Rds On) of 0.99mOhm at 20A and 10V Vgs, it minimizes conduction losses, crucial for thermal management. The device offers a maximum power dissipation of 7.3W at ambient and 208W at case temperature, making it suitable for demanding power supplies, battery management systems, and automotive electronics. The AON6590 is presented in an 8-DFN (5x6) package, facilitating surface mount assembly. Key electrical characteristics include a gate charge (Qg) of 100 nC at 10V Vgs and input capacitance (Ciss) of 8320 pF at 20V Vds. It operates across a junction temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C67A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs0.99mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8320 pF @ 20 V

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