AON6590
MOSFET N-CH 40V 67A/100A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON6590 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 67A at ambient temperature and 100A at case temperature. With a low on-resistance (Rds On) of 0.99mOhm at 20A and 10V Vgs, it minimizes conduction losses, crucial for thermal management. The device offers a maximum power dissipation of 7.3W at ambient and 208W at case temperature, making it suitable for demanding power supplies, battery management systems, and automotive electronics. The AON6590 is presented in an 8-DFN (5x6) package, facilitating surface mount assembly. Key electrical characteristics include a gate charge (Qg) of 100 nC at 10V Vgs and input capacitance (Ciss) of 8320 pF at 20V Vds. It operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.99mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.3W (Ta), 208W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8320 pF @ 20 V |
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