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AON6572

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AON6572

MOSFET N-CH 30V 36A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AON6572 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 36A at ambient temperature and 85A at case temperature. Its low on-resistance of 3.2mOhm at 20A and 10V gate drive voltage minimizes conduction losses. The AON6572 is packaged in an 8-DFN (5x6) surface mount configuration on tape and reel, suitable for automated assembly. Key electrical parameters include a maximum gate charge of 65 nC at 10V and an input capacitance of 3290 pF at 15V drain-source voltage. With a maximum power dissipation of 6.2W (Ta) and 48W (Tc), this MOSFET is engineered for reliable performance across an operating temperature range of -55°C to 150°C. Applications for this component include power supplies, battery management systems, and point-of-load converters across industries such as computing, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3290 pF @ 15 V

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