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AON6562

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AON6562

MOSFET N-CH 30V 29A/32A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS AON6562 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 29A (ambient) and 32A (case). With a low on-resistance of 5mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 6W (ambient) and 25W (case) and is housed in an 8-DFN (5x6) package with an exposed pad for enhanced thermal performance. Key electrical parameters include a gate charge (Qg) of 33 nC maximum at 10V and input capacitance (Ciss) of 1550 pF maximum at 15V. The AON6562 is suitable for demanding applications across various industries, including power management, computing, and consumer electronics. It operates across a wide temperature range of -55°C to 150°C.

Additional Information

Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1550 pF @ 15 V

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