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AON6554

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AON6554

MOSFET N CH 30V 36A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6554 is an N-Channel Power MOSFET designed for high-performance applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 36A at 25°C ambient or 85A at 25°C case temperature. With a low on-resistance of 2.9mOhm at 20A and 10V gate drive, it minimizes conduction losses. The AON6554 is packaged in an 8-DFN (5x6) surface-mount configuration, suitable for demanding thermal management with a maximum power dissipation of 5.6W (Ta) or 70W (Tc). Key electrical parameters include a gate charge of 65nC at 10V and input capacitance of 3020pF at 15V. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in power conversion, battery management, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.6W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 15 V

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