AON6532P
MOSFET N-CH 30V 68A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AON6532P, an N-Channel Power MOSFET in a compact 8-DFN (5x6) package. This component offers a drain-source voltage (Vdss) of 30V and a continuous drain current capability of 68A (Tc) at 25°C. With a low on-resistance (Rds(on)) of 4.1mOhm at 20A and 10V gate drive, it ensures efficient power delivery. The AON6532P features a maximum power dissipation of 35.5W (Tc) and a gate charge (Qg) of 17.2 nC at 10V. Its operating temperature range spans from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management applications across various industries including automotive, consumer electronics, and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35.5W (Tc) |
| Vgs(th) (Max) @ Id | 710mV @ 1A |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 15 V |
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