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AON6532P

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AON6532P

MOSFET N-CH 30V 68A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6532P, an N-Channel Power MOSFET in a compact 8-DFN (5x6) package. This component offers a drain-source voltage (Vdss) of 30V and a continuous drain current capability of 68A (Tc) at 25°C. With a low on-resistance (Rds(on)) of 4.1mOhm at 20A and 10V gate drive, it ensures efficient power delivery. The AON6532P features a maximum power dissipation of 35.5W (Tc) and a gate charge (Qg) of 17.2 nC at 10V. Its operating temperature range spans from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management applications across various industries including automotive, consumer electronics, and industrial automation. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case-
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)35.5W (Tc)
Vgs(th) (Max) @ Id710mV @ 1A
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 15 V

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