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AON6532

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AON6532

MOSFET N CH 30V 27A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AON6532 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 27A at ambient temperature and 68A at case temperature. With a low on-resistance of 5mOhm maximum at 20A and 10V gate drive, it minimizes conduction losses. The AON6532 is housed in an 8-DFN (5x6) package, suitable for surface mounting and offering excellent thermal performance with a maximum power dissipation of 5.7W (Ta) and 35.5W (Tc). Key electrical characteristics include a gate charge of 23 nC at 10V and input capacitance of 1080 pF at 15V. The operating temperature range is -55°C to 150°C. This component is widely utilized in power management, automotive, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.7W (Ta), 35.5W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 15 V

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