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AON6530

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AON6530

MOSFET N CH 30V 28.5A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON6530. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 28.5A at 25°C ambient, or 72A at 25°C case temperature. The AON6530 offers a low on-resistance (Rds On) of 4.5mOhm at 20A and 10V gate-source voltage. It is packaged in an 8-DFN (5x6) surface mount configuration, supplied on tape and reel. Key parameters include a maximum gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1315 pF at 15V. Power dissipation is rated at 5.6W (Ta) and 35.5W (Tc). The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management, automotive, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28.5A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.6W (Ta), 35.5W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1315 pF @ 15 V

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