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AON6522

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AON6522

MOSFET N-CH 25V 71A/200A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON6522, is designed for high-efficiency power conversion applications. This device features a 25V Drain-Source Voltage (Vdss) and offers a continuous drain current of 71A at 25°C ambient and 200A at 25°C case temperature. With a low on-resistance of 0.95mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in an 8-DFN (5x6) package, suitable for surface mounting and optimized for thermal performance with a maximum power dissipation of 7.3W (Ta) and 83W (Tc). Key parameters include a gate charge of 145 nC maximum at 10V and input capacitance of 7036 pF maximum at 15V. It operates across a temperature range of -55°C to 150°C. This component finds application in power supplies, battery management systems, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C71A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs0.95mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7036 pF @ 15 V

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