AON6518
MOSFET N-CH 30V 48A/85A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AlphaMOS AON6518 is an N-Channel MOSFET designed for high-performance power applications. This component features a Drain to Source Voltage (Vdss) of 30V and supports continuous drain currents of 48A at ambient temperature (Ta) and 85A at case temperature (Tc). Its low on-resistance (Rds On) of 1.75mOhm at 20A and 10V (Vgs) minimizes conduction losses.
The AON6518 has a maximum power dissipation of 6.2W (Ta) and 56W (Tc), facilitating efficient thermal management. It operates with drive voltages ranging from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 75 nC at 10V and a maximum input capacitance (Ciss) of 3700 pF at 15V. The device is packaged in an 8-DFN (5x6) surface mount configuration, supplied on tape and reel.
This MOSFET is suitable for a variety of demanding industries, including computing, consumer electronics, and industrial power systems. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage (Vgs) is ±20V. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA.
Additional Information
Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 15 V |
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