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AON6516

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AON6516

MOSFET N-CH 30V 27A/32A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6516 is an N-Channel enhancement mode MOSFET designed for high-efficiency power applications. This component offers a 30V drain-source breakdown voltage and supports continuous drain currents of 27A at ambient temperature and 32A at case temperature. The AON6516 features a low on-resistance of 5mOhm maximum at 20A and 10V Vgs, with an Rds(on) specified for 4.5V and 10V drive voltages. It is housed in a compact 8-DFN (5x6) package, suitable for surface mounting. Key parameters include a maximum gate charge of 33 nC and input capacitance of 1229 pF. With a maximum power dissipation of 6W (ambient) and 25W (case), and an operating temperature range of -55°C to 150°C, this MOSFET is utilized in various industrial and automotive power management systems. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1229 pF @ 15 V

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