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AON6514

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AON6514

MOSFET N-CH 30V 23A/30A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6514 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 23A (at 25°C ambient) and 30A (at 25°C case). With a low on-resistance of 5mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The AON6514 is housed in an 8-DFN (5x6) package, suitable for surface mounting, and offers a maximum power dissipation of 4.1W (ambient) or 25W (case). Key electrical characteristics include a gate charge (Qg) of 22.5 nC maximum at 10V Vgs and an input capacitance (Ciss) of 951 pF maximum at 15V Vds. It operates across a temperature range of -55°C to 150°C. This component is utilized in power management, automotive, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds951 pF @ 15 V

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