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AON6512

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AON6512

MOSFET N-CH 30V 54A/150A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON6512. This device features a 30V drain-source voltage rating and a continuous drain current capability of 54A at 25°C ambient and 150A at 25°C case temperature. Designed for high-density power applications, it offers a low on-resistance of 1.7mOhm at 20A and 10V Vgs. The AON6512 is housed in an 8-DFN (5x6) package, enabling efficient thermal management with a maximum power dissipation of 7.4W (Ta) and 83W (Tc). Key electrical parameters include a gate charge (Qg) of 64 nC (max) at 10V Vgs and input capacitance (Ciss) of 3430 pF (max) at 15V Vds. This component is suitable for use in automotive and industrial power conversion systems. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3430 pF @ 15 V

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