AON6508
MOSFET N-CH 30V 29A/32A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AON6508, an N-Channel MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source voltage rating and supports continuous drain currents of 29A at ambient temperature and 32A at case temperature. With a low on-resistance of 3.2mOhm at 20A and 10V Vgs, the AON6508 minimizes conduction losses. The device is housed in an 8-DFN (5x6) package, facilitating efficient thermal management with a maximum power dissipation of 4.2W (Ta) and 41W (Tc). Key parameters include a gate charge of 49nC at 10V and an input capacitance of 2010pF at 15V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 15 V |
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