AON6506
MOSFET N-CH 30V 33A/36A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AON6506, a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of up to 33A (at 25°C ambient) or 36A (at 25°C case). With a maximum on-resistance (Rds On) of 2.6mOhm at 20A and 10V Vgs, the AON6506 minimizes conduction losses. The device is housed in an 8-DFN (5x6) package, suitable for surface mounting and optimized for thermal management, offering a power dissipation of 4.2W (ambient) and 83W (case). Key electrical characteristics include a gate charge (Qg) of 60nC (max) at 10V Vgs and an input capacitance (Ciss) of 2719pF (max) at 15V Vds. Operating over a temperature range of -55°C to 150°C, this MOSFET is utilized in various industries including automotive and industrial power conversion.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2719 pF @ 15 V |