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AON6504

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AON6504

MOSFET N-CH 30V 51A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6504, an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and offers continuous drain current capabilities of 51A at ambient temperature and 85A at case temperature. The AON6504 exhibits a low on-resistance of 1.8mOhm maximum at 20A and 10V gate-source voltage. With a maximum power dissipation of 7.3W at ambient and 83W at case temperature, it is suitable for demanding thermal environments. Input capacitance (Ciss) is rated at 2719pF maximum at 15V, and gate charge (Qg) is 60nC maximum at 10V. The component is housed in an 8-DFN (5x6) package, facilitating surface mounting. This MOSFET is commonly utilized in automotive, industrial power supplies, and consumer electronics where robust power management is critical. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C51A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2719 pF @ 15 V

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