AON6502
MOSFET N-CH 30V 49A/85A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AON6502, features a 30V drain-source breakdown voltage. This device offers a continuous drain current of 49A at 25°C ambient and 85A at 25°C case temperature, with a maximum power dissipation of 7.4W (ambient) and 83W (case). The AON6502 is specified with a low on-resistance of 2.2mOhm maximum at 20A and 10V gate-source voltage. It utilizes a 5x6mm 8-DFN package with flat leads for surface mounting and is supplied on tape and reel. Key electrical parameters include a gate charge of 64nC maximum at 10Vgs and an input capacitance of 3430pF maximum at 15Vds. This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 15 V |
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