AON6452L
MOSFET N-CH 100V 6.5A/26A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON6452L is an N-Channel Power MOSFET from the SDMOS™ series, designed for high-efficiency power conversion. This component features a Drain-Source Voltage (Vdss) of 100V and offers a continuous drain current (Id) of 6.5A at 25°C ambient temperature and 26A at 25°C case temperature. With a maximum Rds On of 25mOhm at 20A and 10V Vgs, it ensures low conduction losses. The device supports a gate drive voltage range of 7V to 10V and has a maximum gate-source voltage of ±25V. Key characteristics include an input capacitance (Ciss) of 2200pF (max) at 50V Vds and a gate charge (Qg) of 34nC (max) at 10V Vgs. Power dissipation is rated at 2W (Ta) and 35W (Tc). The AON6452L is housed in an 8-DFN (5x6) package, suitable for surface mounting and commonly utilized in applications such as power supplies, motor control, and battery management systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta), 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
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