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AON6452L

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AON6452L

MOSFET N-CH 100V 6.5A/26A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AON6452L is an N-Channel Power MOSFET from the SDMOS™ series, designed for high-efficiency power conversion. This component features a Drain-Source Voltage (Vdss) of 100V and offers a continuous drain current (Id) of 6.5A at 25°C ambient temperature and 26A at 25°C case temperature. With a maximum Rds On of 25mOhm at 20A and 10V Vgs, it ensures low conduction losses. The device supports a gate drive voltage range of 7V to 10V and has a maximum gate-source voltage of ±25V. Key characteristics include an input capacitance (Ciss) of 2200pF (max) at 50V Vds and a gate charge (Qg) of 34nC (max) at 10V Vgs. Power dissipation is rated at 2W (Ta) and 35W (Tc). The AON6452L is housed in an 8-DFN (5x6) package, suitable for surface mounting and commonly utilized in applications such as power supplies, motor control, and battery management systems. It operates across a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 50 V

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