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AON6450

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AON6450

MOSFET N-CH 100V 9A/52A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel Power MOSFET, part number AON6450. This device features a 100V drain-source voltage (Vdss) and supports continuous drain currents of 9A at ambient temperature (Ta) and 52A at case temperature (Tc). With a maximum Rds(on) of 14.5mOhm at 20A and 10V Vgs, it offers low conduction losses. The AON6450 is housed in an 8-DFN (5x6) package, suitable for surface mounting. Key parameters include a maximum gate charge (Qg) of 52 nC at 10V Vgs and input capacitance (Ciss) of 3100 pF at 50V Vds. Power dissipation is rated at 2.3W (Ta) and 83W (Tc). This component is utilized in applications requiring efficient power switching, such as power supplies and motor control systems. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 50 V

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