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AON6440

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AON6440

MOSFET N-CH 40V 20A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6440, an N-Channel Power MOSFET from the SDMOS™ series. This component features a 40V drain-source breakdown voltage and is rated for 20A continuous drain current at ambient temperature and 85A at case temperature. With a low on-resistance of 3.4mOhm at 20A and 10V gate-source voltage, the AON6440 offers efficient power handling, dissipating up to 2.3W at ambient and 83W at case temperature. The device is housed in an 8-DFN (5x6) package, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 97 nC at 10V and an input capacitance (Ciss) of 6000 pF at 20V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in various industrial applications, including power management and switching circuits.

Additional Information

Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 20 V

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