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AON6435

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AON6435

MOSFET P-CH 30V 12A/34A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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The Alpha & Omega Semiconductor Inc. AON6435 is a P-Channel Power MOSFET designed for high-efficiency power conversion applications. Featuring a Drain-to-Source Voltage (Vdss) of 30V, this device offers a continuous drain current of 12A (at ambient temperature) and 34A (at case temperature). The Rds(On) is specified at a maximum of 17mOhm at 20A and 10V gate drive. With a gate charge (Qg) of 21 nC (max) at 10V and input capacitance (Ciss) of 1400 pF (max) at 15V, it is optimized for switching performance. The MOSFET is housed in an 8-DFN (5x6) package, suitable for surface mounting. Maximum power dissipation is 4.1W (at ambient) and 31W (at case temperature). This component finds utility in various industrial sectors, including computing, consumer electronics, and power management solutions. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 15 V

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