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AON6426

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AON6426

MOSFET N-CH 30V 14A/65A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6426 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage and a continuous drain current of 14A at ambient temperature (Ta) and 65A at case temperature (Tc). With a low on-resistance of 5.5mOhm at 20A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 2W ambient and 42W at the case, supported by a thermal resistance suitable for high-power density designs. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2300 pF at 15V. The AON6426 is housed in an 8-DFN (5x6) package, facilitating surface mounting and efficient thermal management. It operates across an industrial temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 15 V

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