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AON6424

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AON6424

MOSFET N-CH 30V 11A/41A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6424 N-Channel Power MOSFET, presented in an 8-DFN (5x6) package. This device offers a 30V drain-source voltage and a continuous drain current of 11A at ambient temperature (Ta) and 41A at case temperature (Tc). With a maximum on-resistance of 8.5mOhm at 20A and 10V gate drive, it achieves 25W of continuous power dissipation at 25°C case temperature. Key electrical parameters include a gate charge (Qg) of 32 nC and input capacitance (Ciss) of 1900 pF at 15V. The AON6424 is suitable for a variety of applications including power management, consumer electronics, and automotive systems due to its robust thermal performance and low Rds(on). It operates across a wide temperature range of -55°C to 150°C and is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id1.7V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 15 V

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