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AON6418

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AON6418

MOSFET N-CH 30V 14A/36A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SDMOS™ N-Channel Power MOSFET, part number AON6418, features a 30V drain-source breakdown voltage. This device offers a continuous drain current of 14A at ambient temperature (Ta) and 36A at case temperature (Tc), with a maximum power dissipation of 6W (Ta) and 25W (Tc). The AON6418 exhibits a low on-resistance of 5mOhm at 20A and 10V Vgs. It is packaged in an 8-DFN (5x6) surface-mount configuration and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge of 33 nC at 10V Vgs and an input capacitance of 1229 pF at 15V Vds. This component is suitable for applications in power management, automotive systems, and consumer electronics.

Additional Information

Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1229 pF @ 15 V

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