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AON6413

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AON6413

MOSFET P-CH 30V 22A/32A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. P-Channel MOSFET AON6413. This device features a 30V drain-source breakdown voltage and rated continuous drain current of 22A (ambient) and 32A (case) at 25°C, with a maximum power dissipation of 6.2W (ambient) and 48W (case). The AON6413 is housed in an 8-DFN (5x6) package for surface mounting. Key performance specifications include a typical Rds(on) of 8.5mOhm at 16A and 10V gate drive. Gate drive voltages range from 4.5V to 10V. Input capacitance (Ciss) is 2142pF at 15V drain-source voltage, and gate charge (Qg) is 58nC at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and automotive sectors. Packaging is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2142 pF @ 15 V

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