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AON6404

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AON6404

MOSFET N-CH 30V 25A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6404 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 25A at ambient temperature and 85A at case temperature. With a maximum on-resistance (Rds On) of 2.2mOhm at 20A and 10V Vgs, it minimizes conduction losses. The AON6404 is housed in an 8-DFN (5x6) package for efficient thermal management, supporting a maximum power dissipation of 2.1W (Ta) and 83W (Tc). Key parameters include a gate charge (Qg) of 155 nC and input capacitance (Ciss) of 9000 pF. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and computing sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs2.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 15 V

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