AON6403L
MOSFET P-CH 30V 21A/85A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON6403L is a P-Channel Power MOSFET designed for demanding applications requiring efficient power switching. This device features a 30V drain-source breakdown voltage (Vdss) and offers continuous drain current capabilities of 21A at ambient temperature (Ta) and 85A at case temperature (Tc). With a low on-resistance (Rds(on)) of 3.1mOhm maximum at 20A and 10V gate drive, it minimizes conduction losses. The MOSFET supports drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 196nC at 10V. Input capacitance (Ciss) is rated at 9120pF maximum at 15V. The AON6403L is packaged in an 8-DFN (5x6) surface mount configuration, suitable for automated assembly. Power dissipation is 2.3W (Ta) and 83W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component finds application in power management, automotive systems, and industrial power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9120 pF @ 15 V |
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