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AON6372

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AON6372

MOSFET N-CH 30V 47A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON6372, offers robust performance in a compact 8-DFN (5x6) package. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 47A at 25°C, with a maximum power dissipation of 26W. Key electrical characteristics include a low on-resistance (Rds On) of 7.2mOhm at 20A and 10V, and a gate charge (Qg) of 12.8 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 830 pF at 15V. The MOSFET operates from a gate drive voltage range of 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.2V at 250µA. Designed for surface mounting, it is suitable for applications in power management, automotive, and industrial systems. The AON6372 is supplied in Tape & Reel packaging and operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)26W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds830 pF @ 15 V

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