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AON6370

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AON6370

MOSFET N-CH 30V 23A/47A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6370, an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 23A at ambient temperature (Ta) and 47A at case temperature (Tc). With a low on-resistance (Rds On) of 7.2mOhm at 20A and 10V, it minimizes conduction losses. The AON6370 is housed in an 8-DFN (5x6) package, suitable for surface mounting and optimized for thermal performance, with a maximum power dissipation of 6.2W (Ta) and 26W (Tc). Key electrical parameters include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 840 pF at 15V. Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power management, automotive systems, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 15 V

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