AON6368
MOSFET N-CH 30V 25A/52A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON6368 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source breakdown voltage (Vds) of 30V and offers continuous drain current (Id) ratings of 25A at ambient temperature and 52A at case temperature (Tc). Its low on-resistance (Rds On) of 6.1mOhm at 20A and 10V Vgs facilitates minimal conduction losses.
The AON6368 utilizes advanced MOSFET technology for optimal performance and thermal management. With a maximum power dissipation of 6.2W (Ta) and 27W (Tc), it is suitable for demanding operating environments. Key electrical parameters include a gate charge (Qg) of 13nC (max) at 10V Vgs and an input capacitance (Ciss) of 820pF (max) at 15V Vds.
Packaged in an 8-DFN (5x6) footprint with surface mount capability, this component is ideal for next-generation power supplies, automotive electronics, and industrial automation systems. The operating temperature range is -55°C to 150°C (TJ). The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) tolerance of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
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