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AON6366E

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AON6366E

MOSFET N-CHANNEL 30V 34A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS series N-Channel MOSFET, part number AON6366E. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 34A at 25°C. The low on-resistance (Rds On) is specified as 3.7mOhm maximum at 20A and 10V gate drive. The manufactured component offers a power dissipation of 46W (Tc) and is housed in an 8-DFN (5x6) package for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 80 nC at 10V and a maximum input capacitance (Ciss) of 3020 pF at 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and automotive systems.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)46W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 15 V

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