AON6362FD
MOSFET N-CH 30V 27A/60A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON6362FD is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and supports a continuous drain current of 27A at ambient temperature and 60A at case temperature. With a low on-resistance of 5.2mOhm at 20A and 10V, it minimizes conduction losses. The AON6362FD offers a maximum power dissipation of 6.2W (Ta) or 31W (Tc), ensuring efficient thermal management. Key parameters include a gate charge of 13nC (max) and input capacitance of 820pF (max). Packaged in an 8-DFN (5x6) format for surface mounting, this MOSFET is suitable for use in power management solutions across various industrial sectors. It operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
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