Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AON6362

Banner
productimage

AON6362

MOSFET N-CH 30V 27A/60A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AON6362. This device features a 30V drain-to-source voltage rating and offers a continuous drain current of 27A at 25°C ambient and 60A at 25°C case temperature. The AON6362 exhibits a maximum ON-resistance of 5.2mOhm at 20A drain current and 10V gate-to-source voltage. It is packaged in an 8-DFN (5x6) footprint for surface mounting and is supplied on tape and reel. Key electrical parameters include a gate charge of 13nC maximum at 10V Vgs and an input capacitance of 820pF maximum at 15V Vds. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management, computing, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AONS520A70

N

product image
AONV110A60

N

product image
AOK065A60FD

LINEAR IC