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AON6314

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AON6314

MOSFET N-CHANNEL 30V 85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6314 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 85A at 25°C (Tc), with a maximum power dissipation of 32.5W (Tc). The AON6314 offers a low on-resistance (Rds On) of 2.8mOhm at 20A and 10V, and a gate charge (Qg) of 20 nC at 4.5V, facilitating fast switching performance. Manufactured using advanced MOSFET technology, this component is housed in an 8-DFN (5x6) package with a surface mount configuration, suitable for demanding thermal management. The operating temperature range is -55°C to 150°C (TJ). Key electrical parameters include an input capacitance (Ciss) of 1900 pF at 15V and a gate-source voltage (Vgs) range of +/-12V. The Alpha & Omega Semiconductor Inc. AON6314 is utilized in industries such as automotive, industrial power supplies, and consumer electronics, where reliable and efficient power switching is critical. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)32.5W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 15 V

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