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AON6290

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AON6290

MOSFET N CH 100V 28A DFN5X6

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

An Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AON6290, offers 100V drain-to-source voltage and 28A continuous drain current at 25°C ambient, scaling to 85A continuous drain current at 25°C case temperature. This MOSFET features a low Rds(on) of 4.6mOhm maximum at 20A and 10V Vgs. With a maximum gate charge of 90 nC and input capacitance of 4600 pF, it is designed for efficient switching applications. The device operates across a wide temperature range from -55°C to 150°C and dissipates up to 7.3W ambient or 208W case. Packaged in an 8-DFN (5x6) surface mount configuration, the AON6290 is suitable for demanding power conversion and management circuits in automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id3.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4600 pF @ 50 V

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