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AON6270

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AON6270

MOSFET N-CH 75V 31.5A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6270 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 75V drain-source voltage and a continuous drain current of 31.5A at an ambient temperature of 25°C, scaling to 85A under continuous drain at case temperature. With a low on-resistance of 3.9mOhm at 20A and 10V, it minimizes conduction losses. The MOSFET is housed in an 8-DFN (5x6) package, supporting surface mount installation and optimized for thermal management with a power dissipation of 7.3W (Ta) and 83W (Tc). Key parameters include a gate charge of 85 nC at 10V and input capacitance of 4100 pF at 37.5V. The AON6270 is suitable for use in power supplies, automotive electronics, and industrial motor control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs3.9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 37.5 V

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