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AON6260

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AON6260

MOSFET N-CH 60V 41A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6260, an N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 60V and offers a continuous drain current of 41A at ambient temperature (Ta) and 85A at case temperature (Tc). With a maximum Rds On of 2.4mOhm at 20A and 10V, the AON6260 is designed for efficient power switching. It supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The device exhibits a maximum input capacitance (Ciss) of 5578pF at 30V and a gate charge (Qg) of 115nC at 10V. Power dissipation is rated at 7.3W (Ta) and 104W (Tc). The AON6260 is supplied in an 8-DFN (5x6) package, suitable for surface mounting, and is delivered on tape and reel. This component is utilized in applications such as power supplies and motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)7.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5578 pF @ 30 V

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