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AON6232

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AON6232

MOSFET N-CH 40V 22A/85A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON6232, an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 40V and offers excellent current handling capabilities with a continuous drain current (Id) of 22A at ambient temperature (Ta) and 85A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 2.5mOhm at 20A and 10V gate drive. With a maximum power dissipation of 2.3W (Ta) and 83W (Tc), the AON6232 is suitable for power conversion and management tasks in industries such as automotive and industrial automation. The MOSFET utilizes advanced Metal Oxide technology and is packaged in an 8-DFN (5x6) surface mount configuration, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 51 nC (max) at 10V and input capacitance (Ciss) of 3800 pF (max) at 20V. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 20 V

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