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AON6202

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AON6202

MOSFET N-CH 30V 21A/24A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AON6202 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 21A at 25°C ambient and 24A at 25°C case temperature. With a low on-resistance of 5.5mOhm maximum at 20A and 10V gate drive, the AON6202 minimizes conduction losses. It supports a wide gate drive voltage range from 4.5V to 10V. The component has a maximum power dissipation of 4.2W (Ta) and 35W (Tc). Key electrical characteristics include 33nC maximum gate charge and 2200pF maximum input capacitance. Housed in an 8-DFN (5x6) package, this surface-mount device is suitable for demanding applications in power management, automotive, and industrial sectors. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 15 V

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