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AON6200L

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AON6200L

MOSFET N-CH 30V 13A/24A 8DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AON6200L, offers a 30V drain-source breakdown voltage. This device features a low on-resistance of 7.8mOhm maximum at 20A and 10V Vgs. Continuous drain current capability is specified as 13A at 25°C ambient temperature and 24A at 25°C case temperature. Power dissipation is 1.95W (Ta) and 35W (Tc). The AON6200L utilizes 4.5V to 10V gate drive voltages and has a maximum gate charge of 20 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 1300 pF at 15V Vds. Packaged in an 8-DFN (5x6) configuration, this surface mount component is suitable for applications in power management and consumer electronics. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs7.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.95W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V

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