AON6160
MOSFET N-CHANNEL 60V 100A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON6160 is an N-Channel AlphaSGT™ MOSFET designed for high-performance applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 1.58mOhm at 20A and 10V. The device is housed in an 8-DFN (5x6) package, suitable for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 7790pF (Max) at 30V and a gate charge (Qg) of 120nC (Max) at 10V. With a maximum power dissipation of 215W (Tc) and an operating temperature range of -55°C to 150°C, the AON6160 is well-suited for power management, automotive, and industrial applications demanding robust switching performance.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.58mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7790 pF @ 30 V |
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