AON4703
MOSFET P-CH 20V 3.4A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON4703 is a P-Channel Power MOSFET designed for efficient power management applications. This component features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) of 3.4A at 25°C, with a maximum power dissipation of 1.7W. The AON4703 is housed in an 8-DFN (3x2) surface-mount package, facilitating compact board designs. Key electrical characteristics include a maximum Rds(on) of 90mOhm at 3.4A and 4.5V Vgs, and a typical gate charge (Qg) of 6.1 nC at 4.5V. It also integrates a Schottky diode for enhanced performance. This MOSFET is suitable for various industries, including consumer electronics and industrial automation, requiring high-efficiency switching solutions. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-DFN (3x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 10 V |
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