AON3419
MOSFET P-CH 30V 10A 8DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. P-Channel Power MOSFET, AON3419. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tc). The low on-resistance of 19mOhm is achieved at 10A and 10V Vgs. The AON3419 is housed in an 8-DFN (3x3) package designed for surface mounting, offering a high power dissipation of 3.1W (Ta). Key electrical characteristics include a gate charge (Qg) of 30 nC maximum at 10V Vgs and input capacitance (Ciss) of 1040 pF maximum at 15V Vds. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V. This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 15 V |
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