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AON2707

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AON2707

MOSFET P-CH 30V 4A 6DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. P-Channel MOSFET, part number AON2707, offers a 30V drain-source voltage and 4A continuous drain current at 25°C. This device features a low Rds(On) of 117mOhm at 4A, 10V, and a gate charge of 12nC at 10V. The 6-DFN (2x2) package with exposed pad ensures efficient thermal performance, supporting up to 2.8W power dissipation. It includes an integrated Schottky diode, enhancing its suitability for high-frequency switching applications. The AON2707 is designed for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds application in power management solutions for consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs117mOhm @ 4A, 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.8W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds305 pF @ 15 V

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