AON2701
MOSFET P-CH 20V 3A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AON2701 is a P-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3A at 25°C, this device is optimized for performance and size. The AON2701 is housed in a compact 6-DFN (2x2) package with an exposed pad for enhanced thermal management, offering a maximum power dissipation of 1.5W. Key electrical characteristics include a low Rds(on) of 120mOhm at 3A and 4.5V Vgs, and a gate charge of 6.5 nC at 4.5V Vgs. The device operates across a wide temperature range from -55°C to 150°C and supports gate drive voltages from 1.8V to 4.5V, with a maximum Vgs of ±8V. It includes an isolated Schottky Diode and is suitable for use in various industries requiring efficient power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V |
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