AON2409
MOSFET P-CH 30V 8A 6DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AON2409 is a P-Channel, 30V MOSFET designed for efficient power switching applications. This device features a low on-resistance of 32mOhm maximum at 8A and 10V Vgs, contributing to reduced conduction losses. The AON2409 offers 8A continuous drain current at 25°C with a maximum power dissipation of 2.8W. Its compact 6-DFN (2x2) package with an exposed pad facilitates effective thermal management. Key electrical characteristics include a gate charge of 14.5 nC maximum at 10V and input capacitance of 530 pF maximum at 15V. This component is suitable for use in various demanding applications, including power management, battery protection, and general-purpose switching across industries from consumer electronics to industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 15 V |
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