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AON1634

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AON1634

MOSFET N-CH 30V 4A 6DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AON1634 is an N-Channel Power MOSFET designed for efficient power management applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 4A at 25°C. The AON1634 boasts a low on-resistance (Rds On) of 54mOhm maximum at 4A and 10V gate-source voltage, contributing to minimized conduction losses. With a maximum power dissipation of 1.8W, it is suitable for thermal management considerations. The MOSFET is housed in a compact 6-DFN (1.6x1.6) package, facilitating high-density board designs. Key electrical parameters include a maximum gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 245 pF maximum at 15V. The threshold voltage (Vgs(th)) is 1.5V maximum at 250µA, and it supports a gate-source voltage range of up to ±12V. Operating across a temperature range of -55°C to 150°C, this MOSFET finds application in various sectors including consumer electronics and industrial automation. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs54mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds245 pF @ 15 V

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