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AON1620

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AON1620

MOSFET N-CH 12V 4A 6DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AON1620, an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous drain current capability of 4A at 25°C. The Rds(On) is specified at a maximum of 22mOhm at 4A and 4.5V Vgs. The AON1620 utilizes a 6-DFN (1.6x1.6) package, facilitating efficient heat dissipation with a maximum power dissipation of 1.8W (Ta). It supports a wide drive voltage range from 1.5V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Key electrical parameters include a maximum gate charge (Qg) of 12 nC at 4.5V Vgs and a maximum input capacitance (Ciss) of 770 pF at 6V Vds. The device operates reliably across an extended temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power management, consumer electronics, and industrial control systems. The component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs22mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 6 V

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