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AON1610

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AON1610

MOSFET N-CH 20V 4A 6DFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AON1610 is an N-Channel MOSFET designed for efficient power switching applications. This device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current capability of 4A at 25°C. The AON1610 boasts a low on-resistance of 29mOhm maximum at 4A and 4.5V Vgs, supported by a 1.5V to 4.5V drive voltage range. With a maximum power dissipation of 1.8W (Ta), it is suitable for thermal management in compact designs. The component is housed in a 6-DFN (1.6x1.6) package, facilitating surface mounting. Key electrical parameters include a gate charge (Qg) of 14 nC maximum at 4.5V Vgs and input capacitance (Ciss) of 748 pF maximum at 10V Vds. This MOSFET is utilized across various industries including consumer electronics, industrial automation, and automotive systems where reliable power control is critical. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs29mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds748 pF @ 10 V

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